Ferromagnetism and Carrier Transport in n-type Diluted Magnetic Semiconductors Ge{sub 0.96−x}Bi{sub x}Fe{sub 0.04}Te Thin Film

Journal Article · Thu Aug 15 04:00:00 EDT 2019 · Journal of Superconductivity and Novel Magnetism

DOI:https://doi.org/10.1007/S10948-019-5002-Y· OSTI ID:22922932

Feng, Yu; Fan, Jiyu; Xie, Yunfei ^[1]; Hong, Bo; Xu, Jingcai ^[2]; Tang, Rujun ^[3]; Zhang, Lei; Ling, Langsheng ^[4]; Wang, Caixia ^[5]; Ma, Chunlan ^[6]; Li, Xiaoying; Zhu, Yan ^[1]

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1. Nanjing University of Aeronautics and Astronautics, Department of Applied Physics (China)
2. China Jiliang University, College of Materials Science and Engineering (China)
3. Soochow University, School of Physical Science and Technology (China)
4. Chinese Academy of Sciences, High Magnetic Field Laboratory (China)
5. Yangzhou University, College of Physics Science and Technology (China)
6. Suzhou University of Science and Technology, Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics (China)

The structural, Hall effect, electronic transport, and magnetic properties of Ge{sub 0.96−x}Bi{sub x}Fe{sub 0.04}Te epitaxial thin film as prepared by pulsed laser deposition technique were reported. X-ray diffraction patterns including linear scans and phi scans confirmed that all films are high quality epitaxy and crystallinity. With the substitution of high valence Bi for Ge element, we found that the previous carriers of hole were changed to electron, which was testified by the negative slopes obtained from the measurements of Hall effect under different temperatures. The electronic transports show a typical semiconductor behavior and can be understood by the small polaron hopping model because the lattice distortions increase the electron-phonon interaction. An obvious ferromagnetic properties occur in the high Bi-doping Ge{sub 0.64}Bi{sub 0.32}Fe{sub 0.04}Te rather than in that with low Bi-doping concentration, indicating that the ferromagnetic establishment is entirely dependent on carrier’s transmissions. The first-principles calculation performed on this system also reveals that the ferromagnetic state exactly exists in the present n-type diluted magnetic semiconductors with Bi co-dopants.

• OSTI ID: 22922932
• Journal Information: Journal of Superconductivity and Novel Magnetism, Journal Name: Journal of Superconductivity and Novel Magnetism Journal Issue: 8 Vol. 32; ISSN 1557-1939
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH COMPOUNDS
DOPED MATERIALS
ELECTRON-PHONON COUPLING
ENERGY BEAM DEPOSITION
EPITAXY
FERROMAGNETISM
GERMANIUM COMPOUNDS
HALL EFFECT
IRON COMPOUNDS
LASER RADIATION
MAGNETIC PROPERTIES
MAGNETIC SEMICONDUCTORS
N-TYPE CONDUCTORS
POLARONS
PULSED IRRADIATION
QUATERNARY ALLOY SYSTEMS
TELLURIUM COMPOUNDS
THIN FILMS
X-RAY DIFFRACTION