Thermodynamic modeling of the deposition of Si—C—N films from the gas phase during the decomposition of organosilicon compounds
- A. V. Nikolaev Institute of Inorganic Chemistry Siberian Branch of the Russian Academy of Sciences (Russian Federation)
Thermodynamic modeling of the process of chemical vapor deposition (CVD) of SiC{sub x} and SiC{sub x}N{sub y} films from the gas phase was carried out using organosilicon compounds (EtN(SiMe{sub 3}){sub 2}, PhN(SiMe{sub 3}){sub 2}, and PhSiMe{sub 3}) at reactor pressures of 0.01 and 10 Torr in the temperature range of 500–1200 K. It was established that regions of existence of two phase complexes, namely, SiC + Si{sub 3}N{sub 4} + C and SiC + C, were present on the CVD diagrams calculated for the EtN(SiMe{sub 3}){sub 2}—He and PhN(SiMe{sub 3}){sub 2}—He systems. The CVD diagrams calculated for the EtN(SiMe{sub 3}){sub 2}—NH{sub 3}, PhN(SiMe{sub 3}){sub 2}—NH{sub 3}, and PhSiMe{sub 3}—NH{sub 3} systems have regions of existence of three phase complexes, namely, Si{sub 3}N{sub 4} + C, SiC + Si{sub 3}N{sub 4} + C, and SiC + C. The composition of the obtained silicon-containing films was calculated.
- OSTI ID:
- 22863337
- Journal Information:
- Russian Chemical Bulletin, Journal Name: Russian Chemical Bulletin Journal Issue: 6 Vol. 67; ISSN RCBUEY; ISSN 1066-5285
- Country of Publication:
- United States
- Language:
- English
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