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Equilibrium predictions of the role of organosilicon compounds in the chemical vapor deposition of silicon carbide

Journal Article · · Journal of the Electrochemical Society; (United States)
DOI:https://doi.org/10.1149/1.2056152· OSTI ID:6448598
 [1]
  1. Sandia National Labs., Livermore, CA (United States)

Equilibrium calculations are reported for a range of conditions used to deposit silicon carbide (SiC) from Si-C-H mixtures such as those using SiH[sub 4], C[sub 2]H[sub 4], and H[sub 2] as reactants. Included are 37 molecules containing both silicon and carbon, allowing an assessment to be made of the importance of organosilicon species (and organosilicon radicals in particular) to the deposition process. The results indicate that Si[sub 2]C and SiCH[sub 2] may contribute to epitaxial SiC deposition and that formation of these and other organosilicon species is favored by low H[sub 2] concentrations. In addition, simulations of gas-phase equilibria expected under low-pressure, low-temperature conditions show that some organosilicon radicals that are kinetically favored are also thermodynamically favored. These include SiC[sub 2], SiCCH, and HSiCCH, which could result from the reaction of SiH[sub 2] with unsaturated reactants such as C[sub 2]H[sub 2]. The results suggest that combining an inert carrier gas with an excess of a surface-reactive hydrocarbon such as C[sub 2]H[sub 2] could increase deposition rates without forming silicon-rich deposits.

OSTI ID:
6448598
Journal Information:
Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 140:3; ISSN JESOAN; ISSN 0013-4651
Country of Publication:
United States
Language:
English