Equilibrium predictions of the role of organosilicon compounds in the chemical vapor deposition of silicon carbide
Equilibrium calculations are reported for a range of conditions used to deposit silicon carbide (SiC) from Si-C-H mixtures such as those using SiH{sub 4}, C{sub 2}H{sub 4}, and H{sub 2} as reactants. Included are 37 molecules containing both silicon and carbon, allowing as assessment to be made of the importance of organosilicon species to the deposition process. The results indicate that Si{sub 2}C and SiCH{sub 2} may contribute to epitaxial SiC deposition and that formation of these and other organosilicon species is favored by low H{sub 2} concentrations. In addition, simulations of gas-phase equilibria expected under low-pressure, low-temperature conditions show that some organosilicon radicals that are kinetically favored are also thermodynamically favored. These include SiC{sub 2}, SiCCH, and HSiCCH, which could results from the reactor of SiH{sub 2} with unsaturated reactants such as C{sub 2}H{sub 2}. The results suggest that combining an inert carrier gas with an excess of a surface-reactive hydrocarbon such as C{sub 2}H{sub 2} could increase deposition rates without forming silicon-rich deposits. 25 refs.
- Research Organization:
- Sandia National Labs., Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DR00789
- OSTI ID:
- 10156022
- Report Number(s):
- SAND--92-8526; ON: DE92015988
- Country of Publication:
- United States
- Language:
- English
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Equilibrium predictions of the role of organosilicon compounds in the chemical vapor deposition of silicon carbide
ON THE FORMATION OF SILACYCLOPROPENYLIDENE (c-SiC{sub 2}H{sub 2}) AND ITS ROLE IN THE ORGANOSILICON CHEMISTRY IN THE INTERSTELLAR MEDIUM