Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy

Journal Article · Wed Feb 14 23:00:00 EST 2018 · Technical Physics Letters

DOI:https://doi.org/10.1134/S1063785018020116· OSTI ID:22786534

Reznik, R. R.; Shtrom, I. V.; Khrebtov, A. I.; Soshnikov, I. P.; Kryzhanovskaya, N. V.; Moiseev, E. I.; Zhukov, A. E. ^[1]

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1. Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation)

Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of ~1.3 μm at room temperature.

• OSTI ID: 22786534
• Journal Information: Technical Physics Letters, Journal Name: Technical Physics Letters Journal Issue: 2 Vol. 44; ISSN 1063-7850
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ARSENIC COMPOUNDS
EMISSION
INDIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
NANOWIRES
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K