Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires

Journal Article · Tue Feb 14 23:00:00 EST 2012 · Semiconductors

DOI:https://doi.org/10.1134/S1063782612020224· OSTI ID:22039043

Tchernycheva, M ^[1]; Patriarche, G; Harmand, J -C ^[2]

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1. Universite Paris-Sud 15, Institut d'Electronique Fondamentale UMR 8622 CNRS (France)
2. LPN CNRS (France)

The effect of the postgrowth annealing of InP/InAsP/InP heterostructural nanowires produced by molecular-beam epitaxy on their structural and optical properties is studied. It is shown that the procedure of short-term (1 min) annealing in an argon atmosphere provides a means for increasing the emission intensity of InAsP quantum dots, suppressing the emission from InAsP quantum wells formed as a result of lateral growth, and substantially reducing the density of structural defects in the nanowires.

• OSTI ID: 22039043
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 46; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARGON
ARSENIC COMPOUNDS
DEFECTS
DENSITY
EMISSION
INDIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
QUANTUM DOTS
QUANTUM WELLS
QUANTUM WIRES