Radial InP/InAsP/InP heterostructure nanowires on patterned Si substrates using self-catalyzed growth for vertical-type optical devices

Journal Article · Mon Jan 05 04:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4905555· OSTI ID:22395648

Kawaguchi, Kenichi ^[1]; Sudo, Hisao; Matsuda, Manabu; Takemoto, Kazuya; Yamamoto, Tsuyoshi ^[2]; Arakawa, Yasuhiko ^[1]

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1. Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
2. Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197 (Japan)

Radial InP/InAsP/InP heterostructure nanowires (NWs) on SiO{sub 2}-mask-pattered Si substrates were reported using self-catalyzed InP NWs. Self-catalyzed growth was performed using low growth temperatures and high group-III flow rates, and vertical InP NWs were formed on the mask openings. The diameter and tapering of the self-catalyzed InP NWs were controlled by the introduction of HCl and H{sub 2}S gases during the NW growth, and InP NWs that have a straight region with decreased diameter were formed. Radial InP/InAsP/InP quantum wells (QWs) were grown on the sidewall of the vertical InP NWs on Si substrates. Room-temperature photoluminescence of single NWs from the QW was clearly observed, which exhibited the potential of building blocks for vertical-type optical devices on Si substrates.

• OSTI ID: 22395648
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ARSENIC COMPOUNDS
FLOW RATE
HYDROCHLORIC ACID
HYDROGEN SULFIDES
INDIUM PHOSPHIDES
NANOWIRES
PHOTOLUMINESCENCE
QUANTUM WELLS
SILICA
SILICON
SILICON OXIDES
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K