Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy

Journal Article · Mon Jan 01 04:00:00 EST 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2429955· OSTI ID:20883257

Cornet, D M; Mazzetti, V G. M.; LaPierre, R R ^[1]

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1. Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4 L7 (Canada)

InP nanowires (NWs) were grown by gas source molecular beam epitaxy on InP (111)B substrates, using Au nanoparticles as a growth catalyst. The rod-shaped NWs exhibited hexagonal sidewall facets oriented along the (-211) family of crystal planes for all NW diameters, indicating minimal sidewall growth. Stacking faults, when present, were concentrated near the NW tips, while NWs with lengths less than 300 nm were completely free of stacking faults.

• OSTI ID: 20883257
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 90; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CATALYSTS
CRYSTAL GROWTH
CRYSTALS
INDIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
STACKING FAULTS
SUBSTRATES