Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons

Journal Article · Wed Nov 15 00:00:00 EST 2017 · Semiconductors

DOI:https://doi.org/10.1134/S106378261711029X· OSTI ID:22756254

Zabavichev, I. Yu.; Potekhin, A. A.; Puzanov, A. S.; Kozlov, V. A. ^[1]

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1. Lobachevsky State University of Nizhny Novgorod (Russian Federation)

Calculation is performed for a flux of charge carriers in the structure of a GaAs bipolar transistor with a thin base in the case where a single cluster of radiation-induced defects is formed in the operating region of a transistor. It is shown that the site of the appearance of a cluster of radiation-induced defects greatly affects the degree of degradation of the gain of a bipolar transistor. The probabilistic assessment of radiation-induced puncture of the base in relation to its thickness and to the neutron fluence is obtained.

• OSTI ID: 22756254
• Journal Information: Semiconductors, Vol. 51, Issue 11; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
DEFECTS
GALLIUM ARSENIDES
NEUTRON FLUENCE
PROBABILISTIC ESTIMATION
TRANSISTORS