Radiation-produced defects in germanium: Experimental data and models of defects

Journal Article · Fri Dec 15 04:00:00 EST 2017 · Semiconductors

DOI:https://doi.org/10.1134/S1063782617120065· OSTI ID:22756237

Kozlovski, V. V. ^[1]; Poloskin, D. S.; Oganesyan, G. A. ^[2]

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1. Peter the Great St. Petersburg Polytechnic University (Russian Federation)
2. Ioffe Institute (Russian Federation)

The problem of radiation-produced defects in n-Ge before and after n → p conversion is discussed in the light of electrical data obtained by means of Hall effect measurements as well as Deep Level Transient Spectroscopy. The picture of the dominant radiation defects in irradiated n-Ge before n → p conversion appears to be complicated, since they turn out to be neutral in n-type material and unobserved in the electrical measurements. It is argued that radiation-produced acceptors at ≈E{sub C} – 0.2 eV previously ascribed to vacancy-donor pairs (E-centers) play a minor role in the defect formation processes under irradiation. Acceptor defects at ≈E{sub V} + 0.1 eV are absolutely dominating in irradiated n-Ge after n → p conversion. All the radiation defects under consideration were found to be dependent on the chemical group-V impurities. Together with this, they are concluded to be vacancy-related, as evidenced positron annihilation experiments. A detailed consideration of experimental data on irradiated n-Ge shows that the present model of radiation-produced defects adopted in literature should be reconsidered.

• OSTI ID: 22756237
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 12 Vol. 51; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CONVERSION
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEFECTS
E CENTERS
EXPERIMENTAL DATA
HALL EFFECT
IRRADIATION