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Radiation defects in gold-doped germanium

Journal Article · · Sov. Phys. - Semicond. (Engl. Transl.); (United States)
OSTI ID:7310574
An investigation was made of the electrical properties of n- and p-type Ge crystals (GESZ-2.5, GDZ-0.6, GES-2.9) irradiated at T< or =320 degreeK with /sup 60/Co ..gamma.. rays and with 12 MeV electrons. The rates of removal of electrons from n-type samples and the rates of introduction of holes into p-type materials were determined at 100 and 300 degreeK. An analysis of the temperature dependences of the Hall coefficient of irradiated and annealed samples demonstrated that gold (Au) in n- and p-type Ge was an effective sink for primary radiation defects and formed complexes with these defects, which were stable up to 670 degreeK. The initial values of the carrier density and of the concentration of electrically active gold atoms (with levels at E/sub c/: 0.20 and E/sub v/+0.15 eV) were restored by annealing at 690--750 degreeK; the activation energy of the annealing of radiation defects at this stage was approx. =2.4 eV for both types of material. Irradiation of Ge:Au produced two different complexes containing Au atoms. In the n-type Ge:Au both types of defect were acceptors, whereas in the p-type Ge:Au one of the defects was in an electrically neutral state and the other exhibited acceptor properties. One of the energy levels of the complexes containing Au was located near the middle of the forbidden band of Ge.
Research Organization:
Scientific-Research Institute of Applied Physics Problems at the V. I. Lenin Belorussian State University, Minsk
OSTI ID:
7310574
Journal Information:
Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 10:12; ISSN SPSEA
Country of Publication:
United States
Language:
English