Purcell Effect in Tamm Plasmon Structures with QD Emitter

Journal Article · Sun Apr 15 04:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618040164· OSTI ID:22750005

Gubaydullin, A. R. ^[1]; Symonds, C.; Bellessa, J. ^[2]; Ivanov, K. A.; Kolykhalova, E. D.; Sasind, M. E. ^[1]; Pozina, G. ^[3]

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1. St Petersburg Academic University (Russian Federation)
2. Institut Lumière Matière, Univ Lyon, Université Claude Bernard Lyon 1, CNRS (France)
3. Linköping University, Department of Physics, Chemistry and Biology (Sweden)

We study Tamm plasmon structure based on GaAs/Al{sub 0.95}GaAs distributed Bragg reflector covered by thin silver layer, with active area formed by InAs quantum dots. We have measured the spectral and angular characteristics of photoluminescence and performed theoretical calculation of the spontaneous emission rate (modal Purcell factor) in the structure by using S-quantization formalism. We show that for Tamm plasmon mode the spontaneous emission can be enhanced by more than an order of magnitude, despite absorption in metallic layer.

• OSTI ID: 22750005
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
INDIUM ARSENIDES
PLASMONS
QUANTUM DOTS