Laser-Induced Modification of the Surface of Ge{sub 2}Sb{sub 2}Te{sub 5} Thin Films: Phase Changes and Periodic-Structure Formation

Journal Article · Fri Jun 15 04:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618060246· OSTI ID:22749916

Yakovlev, S. A.; Ankudinov, A. V. ^[1]; Vorobyov, Yu. V. ^[2]; Voronov, M. M. ^[1]; Kozyukhin, S. A. ^[3]; Melekh, B. T.

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1. Ioffe Institute (Russian Federation)
2. Ryazan State Radio Engineering University (Russian Federation)
3. Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation)

Submicron periodic lattices are formed at the surface of phase-change-memory film materials based on the complex chalcogenide Ge{sub 2}Sb{sub 2}Te{sub 5} when exposed to nanosecond laser pulses. The geometric characteristics and structural properties of laser-induced lattices are studied by optical and atomic-force microscopies and Raman spectroscopy. It is shown that, at appropriately chosen parameters of exposure to laser radiation, it is possible to implement periodic modulation of the refractive index in the structures formed. Modulation is due to the postexposure solidification of grating ridges and valleys in different phase states, whose dielectric constants widely differ from each other. In the vicinity of the maxima of the wavy structure, the amorphous state is mainly formed, whereas in the region of minima, the Ge{sub 2}Sb{sub 2}Te{sub 5} structure corresponds mainly to the crystalline phase.

• OSTI ID: 22749916
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ATOMIC FORCE MICROSCOPY
DIELECTRIC MATERIALS
LASER RADIATION
RAMAN SPECTROSCOPY
REFRACTIVE INDEX
THIN FILMS