Direct observations of Ge{sub 2}Sb{sub 2}Te{sub 5} recording marks in the phase-change disk
- Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
- Digital and Network Technology Development Center, Panasonic Corporation, Yagumo-naka-machi, Moriguchi, Osaka 570-8501 (Japan)
Atomistic structures of the Ge{sub 2}Sb{sub 2}Te{sub 5} thin film in the real phase-change disk have been investigated using transmission electron microscopy (TEM). As-deposited amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} films were laser-irradiated for initialization (crystallization) and recording. Cross-sectional TEM observations revealed that the recording mark was fully amorphized by laser irradiation. A slight difference between the as-deposited and the laser irradiation-induced amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} was observed in the intensity profile of nanobeam electron diffraction patterns and atomic pair distribution functions. This difference was attributed to structural relaxation of amorphous Ge{sub 2}Sb{sub 2}Te{sub 5}, which gives rise to the alteration of chemical order.
- OSTI ID:
- 21476245
- Journal Information:
- Journal of Applied Physics, Vol. 107, Issue 10; Other Information: DOI: 10.1063/1.3373419; (c) 2010 American Institute of Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ANTIMONIDES
CRYSTALLIZATION
DISTRIBUTION FUNCTIONS
ELECTRON DIFFRACTION
GERMANIUM TELLURIDES
GLASS
LASER RADIATION
PHASE CHANGE MATERIALS
RELAXATION
SEMICONDUCTOR MATERIALS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
ANTIMONY COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
FILMS
FUNCTIONS
GERMANIUM COMPOUNDS
MATERIALS
MICROSCOPY
PHASE TRANSFORMATIONS
PNICTIDES
RADIATIONS
SCATTERING
TELLURIDES
TELLURIUM COMPOUNDS