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Title: Direct observations of Ge{sub 2}Sb{sub 2}Te{sub 5} recording marks in the phase-change disk

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3373419· OSTI ID:21476245
; ;  [1]; ;  [2]
  1. Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)
  2. Digital and Network Technology Development Center, Panasonic Corporation, Yagumo-naka-machi, Moriguchi, Osaka 570-8501 (Japan)

Atomistic structures of the Ge{sub 2}Sb{sub 2}Te{sub 5} thin film in the real phase-change disk have been investigated using transmission electron microscopy (TEM). As-deposited amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} films were laser-irradiated for initialization (crystallization) and recording. Cross-sectional TEM observations revealed that the recording mark was fully amorphized by laser irradiation. A slight difference between the as-deposited and the laser irradiation-induced amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} was observed in the intensity profile of nanobeam electron diffraction patterns and atomic pair distribution functions. This difference was attributed to structural relaxation of amorphous Ge{sub 2}Sb{sub 2}Te{sub 5}, which gives rise to the alteration of chemical order.

OSTI ID:
21476245
Journal Information:
Journal of Applied Physics, Vol. 107, Issue 10; Other Information: DOI: 10.1063/1.3373419; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English