Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy

Journal Article · Wed Aug 15 04:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618080195· OSTI ID:22749844

Goloshchapov, D. L.; Zolotukhin, D. S.; Lenshin, A. S.; Lukin, A. N.; Khudyakov, Yu. Yu. ^[1]; Arsentyev, I. N.; Zhabotinsky, A. V.; Nikolaev, D. N.; Pikhtin, N. A. ^[2]

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1. Voronezh State University (Russian Federation)
2. Ioffe Institute (Russian Federation)

It is shown for the first time that the structural and optical functional characteristics of integrated GaAs/Si(100) heterostructures can be controlled by using misoriented Si(100) substrates and their preliminary etching. The growth of an epitaxial GaAs layer on a Si substrate without the formation of antiphase domains can be carried out on a substrate deviated from the (100) singular plane by an angle smaller than 4°–6° or without a transition layer of GaAs nanocolumns. Preliminary treatment of the silicon substrate by etching makes it possible to use it for the vapor-phase epitaxial growth of a single-crystal GaAs film with a considerably smaller relaxation coefficient, which has a positive effect on the structural quality of the film. These data are in good agreement with the results of IR reflectance spectroscopy and photoluminescence and ultraviolet spectroscopy. The features of the optical properties of integrated GaAs/Si(100) heterostructures in the infrared and ultraviolet spectral regions are also defined by the relaxation coefficient.

• OSTI ID: 22749844
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ETCHING
GALLIUM ARSENIDES
OPTICAL PROPERTIES
SUBSTRATES
ULTRAVIOLET RADIATION
VAPOR PHASE EPITAXY