Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs

Journal Article · Mon Oct 15 04:00:00 EDT 2018 · Semiconductors

DOI:https://doi.org/10.1134/S1063782618100226· OSTI ID:22749774

Volkov, V. V. ^[1]; Kogan, L. M. ^[2]; Yunovich, A. E. ^[1]

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1. Moscow State University (Russian Federation)
2. Scientific-and-Production Center “Optel” (Russian Federation)

The electroluminescence spectra of high-power light-emitting diodes (LEDs) based on p–n heterostructures of the InGaN/AlGaN/GaN type emitting in the visible short-wavelength and ultraviolet spectral regions (the range from 370 to 460 nm) are investigated. The shape of spectra is described by a model taking into account a two-dimensional combined density of states and potential fluctuations. Additional long-wavelength peaks are found in emission spectra. The emission power of ultraviolet and violet LEDs reaches 233 mW at a current of 350 mA, and the external quantum yield reaches 23% at the maximum (near a current of 100 mA).

• OSTI ID: 22749774
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 52; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DENSITY OF STATES
EMISSION SPECTRA
GALLIUM NITRIDES
LIGHT EMITTING DIODES
TWO-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS
ULTRAVIOLET RADIATION