Electroluminescence spectra of ultraviolet light-emitting diodes based on p-n-heterostructures coated with phosphors

Journal Article · Sat Sep 15 04:00:00 EDT 2007 · Semiconductors

DOI:https://doi.org/10.1134/S1063782607090199· OSTI ID:21087993

Gal'china, N A; Kogan, L M ^[1]; Soshchin, N P ^[2]; Shirokov, S S

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1. Scientific and Production Center of Optoelectronic Devices OPTEL (Russian Federation)
2. Federal State Unitary Enterprise NII Platan (Russian Federation)

The electroluminescence spectra of light-emitting diodes based on p-n heterostructures of the InGaN/AlGaN/GaN type are studied in the near-ultraviolet spectral region (360-405 nm). The spectra are peaked at the wavelengths 385 and 395 nm, and the intensity of emission falls exponentially with the photon energy in the shorter-wavelength and longer-wavelength regions. The emitters in the green and yellow spectral regions based on these light-emitting diodes coated with silicate phosphors are studied. The luminescence spectra of phosphors have the Gaussian shape and maximums in the range from 525 to 560 nm. The color characteristics of emitters depend on the ratios of intensities of the ultraviolet and yellow-green bands. The possibilities of fabrication of light-emitting diodes of visible luminescence based on ultraviolet light-emitting diodes that excite colored phosphors are discussed.

• OSTI ID: 21087993
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 41; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTROLUMINESCENCE
FABRICATION
GALLIUM NITRIDES
INDIUM NITRIDES
LIGHT EMITTING DIODES
PHOSPHORS
PHOTONS
SILICATES
SPECTRA
ULTRAVIOLET RADIATION