Luminescence spectra, efficiency, and color characteristics of white-light-emitting diodes based on p-n InGaN/GaN heterostructures with phosphor coatings
- OPTEL Center (Russian Federation)
- Platan Research Institute (Russian Federation)
The luminescence spectra, efficiency, and color characteristics of white-light-emitting diodes fabricated from p-n InGaN/AlGaN/GaN blue-light-emitting heterostructures grown on SiC substrates and coated with yellow-green phosphors based on the rare-earth-doped yttrium-aluminum garnets were studied. The efficiency of blue-emitting diodes is as high as 22% at a current of 350 mA and a voltage of 3.3 V. The white-emitting diodes have luminous efficiency as high as 40 lm/W and luminous flux up to 50 lm at 350 mA.
- OSTI ID:
- 21088520
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 40; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Light-emitting diodes of 'Warm' white luminescence on the basis of p-n heterostructures of the InGaN/AlGaN/GaN type coated with phosphors made of yttrium-gadolinium garnets
Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes
Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers
Journal Article
·
Fri May 15 00:00:00 EDT 2009
· Semiconductors
·
OSTI ID:21260360
Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes
Journal Article
·
Mon Sep 15 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22303494
Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers
Journal Article
·
Sat Jun 21 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22303978