Design and performance of nitride-based ultraviolet (UV) LEDs

Conference · Mon Apr 24 04:00:00 EDT 2000

OSTI ID:754339

CRAWFORD, MARY H ^[1]; HAN, JUNG

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1. Sandia National Laboratories

The authors overview several of the challenges in achieving high efficiency nitride-based UV (< 400 nm) LEDs. The issue of optical efficiency is presented through temperature-dependent photoluminescence studies of various UV active regions. These studies demonstrate enhanced optical efficiencies for active regions with In-containing alloys (InGaN, AlInGaN). The authors compare the performance of two distinct UV LED structures. GaN/AlGaN quantum well LEDs with {lambda} < 360 nm emission have demonstrated output powers > 0.1 mW, but present designs suffer from internal absorption effects. InGaN/AlInGaN quantum well LEDs with 370 nm < {lambda} < 390 nm emission and > 1 mW output power are also presented.

• Research Organization: Sandia National Labs., Albuquerque, NM (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 754339
• Report Number(s): SAND99-2930C; 0000033853-000; 0000033853-000
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM NITRIDES
DESIGN
GALLIUM NITRIDES
INDIUM NITRIDES
LIGHT EMITTING DIODES
PERFORMANCE
ULTRAVIOLET RADIATION