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Title: Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes

Abstract

The effect of low-dose proton irradiation (irradiation dose 10{sup 10}–1.8 × 10{sup 11} cm{sup –2}) on the capacitance–voltage, forward current–voltage, and reverse-recovery characteristics of 4H-SiC p–n{sub o} junction diodes is studied. Irradiation is performed with 1.8-MeV protons through a 10-μm-thick Ni-film (the proton energy and Ni-film thickness were chosen so that the projected proton range in silicon carbide is approximately equal to the p–n{sub o} junction depth). It is shown that proton irradiation in the above doses (i) does not change the concentration of majority carriers, (ii) leads to a dramatic decrease in the lifetime of nonequilibrium carriers (at a low injection level) (by several tens of times at the highest irradiation dose), and (iii) decreases the reverse-recovery charge at a high injection level (by up to a factor of 3 at the highest irradiation dose).

Authors:
; ; ;  [1]
  1. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22749773
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 52; Journal Issue: 10; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE; ELECTRIC CONTACTS; LOW DOSE IRRADIATION; PROTONS; RADIATION DOSES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDES

Citation Formats

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru, Potapov, A. S., Kudoyarov, M. F., and Samsonova, T. P.. Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes. United States: N. p., 2018. Web. doi:10.1134/S1063782618100056.
Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru, Potapov, A. S., Kudoyarov, M. F., & Samsonova, T. P.. Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes. United States. doi:10.1134/S1063782618100056.
Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru, Potapov, A. S., Kudoyarov, M. F., and Samsonova, T. P.. Mon . "Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes". United States. doi:10.1134/S1063782618100056.
@article{osti_22749773,
title = {Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes},
author = {Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru and Potapov, A. S. and Kudoyarov, M. F. and Samsonova, T. P.},
abstractNote = {The effect of low-dose proton irradiation (irradiation dose 10{sup 10}–1.8 × 10{sup 11} cm{sup –2}) on the capacitance–voltage, forward current–voltage, and reverse-recovery characteristics of 4H-SiC p–n{sub o} junction diodes is studied. Irradiation is performed with 1.8-MeV protons through a 10-μm-thick Ni-film (the proton energy and Ni-film thickness were chosen so that the projected proton range in silicon carbide is approximately equal to the p–n{sub o} junction depth). It is shown that proton irradiation in the above doses (i) does not change the concentration of majority carriers, (ii) leads to a dramatic decrease in the lifetime of nonequilibrium carriers (at a low injection level) (by several tens of times at the highest irradiation dose), and (iii) decreases the reverse-recovery charge at a high injection level (by up to a factor of 3 at the highest irradiation dose).},
doi = {10.1134/S1063782618100056},
journal = {Semiconductors},
issn = {1063-7826},
number = 10,
volume = 52,
place = {United States},
year = {2018},
month = {10}
}