Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes
- Ioffe Institute (Russian Federation)
The effect of low-dose proton irradiation (irradiation dose 10{sup 10}–1.8 × 10{sup 11} cm{sup –2}) on the capacitance–voltage, forward current–voltage, and reverse-recovery characteristics of 4H-SiC p–n{sub o} junction diodes is studied. Irradiation is performed with 1.8-MeV protons through a 10-μm-thick Ni-film (the proton energy and Ni-film thickness were chosen so that the projected proton range in silicon carbide is approximately equal to the p–n{sub o} junction depth). It is shown that proton irradiation in the above doses (i) does not change the concentration of majority carriers, (ii) leads to a dramatic decrease in the lifetime of nonequilibrium carriers (at a low injection level) (by several tens of times at the highest irradiation dose), and (iii) decreases the reverse-recovery charge at a high injection level (by up to a factor of 3 at the highest irradiation dose).
- OSTI ID:
- 22749773
- Journal Information:
- Semiconductors, Vol. 52, Issue 10; Other Information: Copyright (c) 2018 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction
High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction