Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation
- Ioffe Institute (Russian Federation)
The effect of proton irradiation on the electrical characteristics of high-voltage (3 kV) 4H-SiC junction diodes is studied. The diodes are irradiated through a 10-μm-thick Ni mask. The proton energy and the irradiation dose are 2.8 MeV and 4 × 10{sup 11} cm{sup –2}, respectively. After irradiation, the forward differential resistance of the diodes increased by ~35%, the reverse-recovery charge decreased by a factor of ~3, and the nature of the reverse recovery became “hard.”.
- OSTI ID:
- 22944986
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 53; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes
High-voltage (3.3 kV) 4H-SiC JBS diodes
Dynamic characteristics of 4H-SiC drift step recovery diodes
Journal Article
·
Mon Oct 15 00:00:00 EDT 2018
· Semiconductors
·
OSTI ID:22749773
High-voltage (3.3 kV) 4H-SiC JBS diodes
Journal Article
·
Sun May 15 00:00:00 EDT 2011
· Semiconductors
·
OSTI ID:22004806
Dynamic characteristics of 4H-SiC drift step recovery diodes
Journal Article
·
Sat Nov 14 23:00:00 EST 2015
· Semiconductors
·
OSTI ID:22469688