Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn

Journal Article · Tue Nov 15 04:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616110129· OSTI ID:22649669

Kalentyeva, I. L.; Danilov, Yu. A.; Zvonkov, B. N.; Kudrin, A. V. ^[1]; Drozdov, M. N. ^[2]

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1. Lobachevsky State University, Physical–Technical Research Institute (Russian Federation)
2. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

The effects of isochronal thermal annealing (at 325–725°C) on the radiative properties of InGaAs/GaAs nanoheterostructures containing a low-temperature GaAs layer δ-doped with Mn grown by laser deposition are studied. A decrease in the photoluminescence intensity and increase in the ground transition energy are observed upon thermal impact for quantum wells located near the low-temperature GaAs layer. The distribution of Mn atoms in the initial and annealed structures is obtained by secondary-ion mass spectrometry. A qualitative model of the observed effects of thermal annealing on the radiative properties of the structures is discussed; this model takes into account two main processes: diffusion of point defects (primarily gallium vacancies) from the GaAs coating layer deep into the structure and Mn diffusion in both directions by the dissociation mechanism. Magnetization studies show that, as a result of thermal annealing, an increase in the proportion of the ferromagnetic phase at room temperature (presumably, MnAs clusters) in the low-temperature GaAs coating layer takes place.

• OSTI ID: 22649669
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 50; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
COATINGS
DEPOSITION
DIFFUSION
DOPED MATERIALS
GALLIUM
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MAGNETIZATION
MANGANESE ARSENIDES
MASS SPECTROSCOPY
PHOTOLUMINESCENCE
QUANTUM WELLS
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
VACANCIES