Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn

Journal Article · Thu Jan 15 04:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615010200· OSTI ID:22470129

Vikhrova, O. V.; Danilov, Yu. A.; Zvonkov, B. N.; Kalentyeva, I. L. ^[1]; Nezhdanov, A. V.; Chunin, I. I. ^[2]; Yunin, P. A. ^[3]

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1. Lobachevsky State University of Nizhni Novgorod, Physical Technical Research Institute (Russian Federation)
2. Lobachevsky State University of Nizhni Novgorod (Russian Federation)
3. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature δ-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the δ-layer. The thickness of the cap layer is found to be d{sub c} ≈ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.

• OSTI ID: 22470129
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
CRYSTALS
DEPOSITION
DIFFUSION
DOPED MATERIALS
GALLIUM ARSENIDES
HETEROJUNCTIONS
HOLES
INDIUM ARSENIDES
LASER RADIATION
LAYERS
MANGANESE
ORGANOMETALLIC COMPOUNDS
PHONONS
PHOTOLUMINESCENCE
PLASMONS
QUANTUM WELLS
RAMAN SPECTROSCOPY
VAPOR PHASE EPITAXY