Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures
- Lobachevsky State University of Nizhny Novgorod (Russian Federation)
- Nizhni Novgorod State University, Physical Technical Research Institute (Russian Federation)
The photosensitivity, photoluminescence, and electroluminescence spectra of InGaAs/GaAs diode nanoheterostructures with a Si δ layer formed at a distance of 10 nm from the InGaAs quantum well are studied. The influence of the arrangement of the δ layer with respect to the quantum well on the optoelectronic properties of the structures is established.
- OSTI ID:
- 22470085
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 2 Vol. 49; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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