InGaN/GaN light-emitting diode microwires of submillimeter length
- Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
- Russian Academy of Sciences, Research and Engineering Center of Submicron Heterostructures for Microelectronics (Russian Federation)
Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 μm in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region.
- OSTI ID:
- 22649623
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 51; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire
Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition
Journal Article
·
Thu Nov 26 19:00:00 EST 2015
· Scientific Reports
·
OSTI ID:1236206
Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
Journal Article
·
Thu Jan 14 23:00:00 EST 2010
· Semiconductors
·
OSTI ID:21562358
GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition
Journal Article
·
Thu Jan 30 19:00:00 EST 2020
· Physica Status Solidi. A, Applications and Materials Science
·
OSTI ID:1618075