Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire

Tanaka, Atsunori; Chen, Renjie; Jungjohann, Katherine L.; Dayeh, Shadi A.

doi:10.1038/srep17314

Title: Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire

Journal Article · Fri Nov 27 00:00:00 EST 2015 · Scientific Reports

DOI:https://doi.org/10.1038/srep17314· OSTI ID:1236206

Tanaka, Atsunori ^[1]; Chen, Renjie ^[1]; Jungjohann, Katherine L. ^[2]; Dayeh, Shadi A. ^[1]

Univ. of California, San Diego, La Jolla, CA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. Our detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates is reported here, and we utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO₂. We show that the mask opening diameter leads to as much as 4 times increase in the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We also observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Lastly, such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1236206

Report Number(s):: SAND-2015-7621J; srep17314

Journal Information:: Scientific Reports, Vol. 5; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 34 works

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36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
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Title: Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire

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