GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition

Tarief Elshafiey, Abdelrahman; DaVico, Kenneth M.; Rishinaramangalam, Ashwin K.; Rashidi, Arman; Aragon, Andrew; Feezell, Daniel; Gunning, Brendan P.; Sheehan, Christopher; Matias, Vladimir

doi:10.1002/pssa.201900800

GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition

Journal Article · Fri Jan 31 00:00:00 EST 2020 · Physica Status Solidi. A, Applications and Materials Science

DOI:https://doi.org/10.1002/pssa.201900800· OSTI ID:1618075

^[1]; DaVico, Kenneth M. ^[1]; Rishinaramangalam, Ashwin K. ^[1]; Rashidi, Arman ^[1]; Aragon, Andrew ^[1]; Feezell, Daniel ^[1]; Gunning, Brendan P. ^[2]; Sheehan, Christopher ^[3]; Matias, Vladimir ^[3]

Univ. of New Mexico, Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
iBeam Materials, Santa Fe, NM (United States)

Light-emitting diode (LED) arrays fabricated on a polycrystalline metal substrate are demonstrated using a novel technique that enables the growth of epitaxial metal-organic chemical vapor deposition (MOCVD) GaN layers on non-single-crystal substrates. Epitaxial GaN is deposited directly on metal foil using an intermediate ion beam-assisted deposition (IBAD) aligned layer. For a single 170 μm-diameter LED on the metal foil, electroluminescence (EL) spectrum shows a peak wavelength of ≈452 nm and a full width at half maximum (FWHM) of ≈24 nm. The current–voltage (I –V ) characteristics show a turn-on voltage of 3.7 V, a series resistance of 10 Ω. LEDs on metal show a relative external quantum efficiency (EQE) that is roughly 3× lower than that of similar LEDs fabricated on a sapphire substrate. Finally, InGaN LEDs on large-area non-single-crystal substrates such as metal foils enable large-area manufacturing, reducing production cost, and opening the door for new applications in lighting and displays.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: 89233218CNA000001; AC04-94AL85000; AR0000447; NA0003525

OSTI ID:: 1618075

Alternate ID(s):: OSTI ID: 1596390

Report Number(s):: SAND--2020-0090J; 681940

Journal Information:: Physica Status Solidi. A, Applications and Materials Science, Journal Name: Physica Status Solidi. A, Applications and Materials Science Journal Issue: 7 Vol. 217; ISSN 1862-6300

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
GaN
III-nitrides
InGaN
LEDs
metal foils

GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition

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