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Title: GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition

Journal Article · · Physica Status Solidi. A, Applications and Materials Science

Light-emitting diode (LED) arrays fabricated on a polycrystalline metal substrate are demonstrated using a novel technique that enables the growth of epitaxial metal-organic chemical vapor deposition (MOCVD) GaN layers on non-single-crystal substrates. Epitaxial GaN is deposited directly on metal foil using an intermediate ion beam-assisted deposition (IBAD) aligned layer. For a single 170 μm-diameter LED on the metal foil, electroluminescence (EL) spectrum shows a peak wavelength of ≈452 nm and a full width at half maximum (FWHM) of ≈24 nm. The current–voltage (I –V ) characteristics show a turn-on voltage of 3.7 V, a series resistance of 10 Ω. LEDs on metal show a relative external quantum efficiency (EQE) that is roughly 3× lower than that of similar LEDs fabricated on a sapphire substrate. Finally, InGaN LEDs on large-area non-single-crystal substrates such as metal foils enable large-area manufacturing, reducing production cost, and opening the door for new applications in lighting and displays.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Grant/Contract Number:
AC04-94AL85000; AR0000447; 89233218CNA000001; NA0003525
OSTI ID:
1618075
Alternate ID(s):
OSTI ID: 1596390
Report Number(s):
SAND-2020-0090J; 681940
Journal Information:
Physica Status Solidi. A, Applications and Materials Science, Vol. 217, Issue 7; ISSN 1862-6300
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

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