Study of the correlation properties of the surface structure of nc-Si/a-Si:H films with different fractions of the crystalline phase

Journal Article · Sun May 15 04:00:00 EDT 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616050031· OSTI ID:22645550

Vikhrov, S. P. ^[1]; Kazanskii, A. G. ^[2]; Lyaskovskii, V. L. ^[3]; Rybin, N. B.; Rybina, N. V. ^[1]; Forsh, P. A. ^[2]

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1. Ryazan State Radio-Engineering University (Russian Federation)
2. Moscow State University (Russian Federation)
3. All-Russia Research Institute for Optical and Physical Measurements (Russian Federation)

The correlation properties of the structure of nc-Si/a-Si:H films with different volume fractions of the crystalline phase are studied using 2D detrended fluctuation analysis. Study of the surface relief of experimental samples showed that with increasing in volume fraction of the crystalline phase in the nc-Si/a-Si:H films, the size and number of nanoclusters on their surface grow. The size of Si nanocrystals in the a-Si:H matrix (6–8 nm) indicates the formation of coarse nanoclusters due to the self-organization of Si nanocrystals in groups under laser radiation. According to 2D detrended fluctuation analysis data, the number of correlation vectors (harmonic components) in the nc-Si/a-Si:H film structure increased with an increase in the nanocrystal fraction in the films.

• OSTI ID: 22645550
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 5 Vol. 50; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CORRELATIONS
CRYSTAL STRUCTURE
FLUCTUATIONS
LASER RADIATION
MATRIX MATERIALS
NANOSTRUCTURES
SILICON
SURFACES
THIN FILMS