Strained multilayer structures with pseudomorphic GeSiSn layers

Journal Article · Thu Dec 15 00:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S106378261612023X· OSTI ID:22645288

Nikiforov, A. I.; Tuktamyshev, A. R.; Yesin, M. Yu.; Mashanov, V. I.; Gutakovskii, A. K. ^[1]; Baidakova, N. A. ^[2]

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1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
2. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

The temperature and composition dependences of the critical thickness of the 2D–3D transition for a GeSiSn film on Si(100) have been studied. The regularities of the formation of multilayer structures with pseudomorphic GeSiSn layers directly on a Si substrate, without relaxed buffer layers, were investigated for the first time. The possibility of forming multilayer structures based on pseudomorphic GeSiSn layers has been shown and the lattice parameters have been determined using transmission electron microscopy. The grown structures demonstrate photoluminescence for Sn contents from 3.5 to 5% in GeSiSn layers.

• OSTI ID: 22645288
• Journal Information: Semiconductors, Vol. 50, Issue 12; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
GERMANIUM SILICIDES
LATTICE PARAMETERS
LAYERS
PHOTOLUMINESCENCE
SILICON
STRAINS
SUBSTRATES
THIN FILMS
TIN COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY