Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs

Journal Article · Thu Dec 15 04:00:00 EST 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616120253· OSTI ID:22645286

Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R. ^[1]

---

1. Siberian Branch, Russian Academy of Sciences, Institute of Semiconductor Physics (Russian Federation)

The optical reflection from periodic structures based on a semiconductor AlGaAs matrix containing 2D arrays of plasmonic AsSb nanoinclusions is studied. The number of nanoinclusion layers is 12 or 24, and the nominal spatial periods are 100 or 110 nm, respectively. In the experimental spectra of the optical reflection coefficient at normal incidence, we observe resonant Bragg diffraction with the main peaks at wavelengths of 757 or 775 nm (1.64 or 1.60 eV), depending on the spatial period of the nanostructure. The magnitudes of the resonance peaks reach 22 and 31% for the systems of 12 and 24 AsSb–AlGaAs layers, while the volume fraction of the nanoinclusions is much less than 1%. In the case of light incident at inclined angles, the Bragg-diffraction pattern shifts according to Wulff–Bragg’s law. Numerical simulation of the optical reflection spectra is performed using the transfer-matrix method by taking into account the spatial geometry of the structures and the resonance characteristics of the plasmonic AsSb layers.

• OSTI ID: 22645286
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 12 Vol. 50; ISSN 1063-7826; ISSN SMICES
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ANTIMONIDES
BRAGG REFLECTION
COMPUTERIZED SIMULATION
GALLIUM ARSENIDES
LAYERS
NANOSTRUCTURES
OPTICAL REFLECTION
PLASMONS
RESONANCE
SEMICONDUCTOR MATERIALS
TRANSFER MATRIX METHOD
VISIBLE RADIATION