Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials

Journal Article · Tue Dec 15 04:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615120234· OSTI ID:22469679

Bert, N. A.; Nevedomsky, V. N.; Il’inskaya, N. D.; Lebedeva, N. M. ^[1]; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R. ^[2]

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1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
2. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

Optical extinction in a metal–semiconductor metamaterial based on a AlGaAs matrix, which contains random arrays of AsSb plasmon nanoinclusions, is studied. The metamaterial is grown by molecular beam epitaxy at a low temperature. A system of nanoinclusions of various sizes is formed by annealing at temperatures 400, 500, and 600°C. Investigation of the sample’s microstructure by transmission electron microscopy shows that the average size of nanoinclusions at the used annealing temperatures is 4–7, 5–8, and 6–9 nm, respectively. It is shown experimentally that AsSb nanoparticle arrays in the AlGaAs matrix cause the resonant absorption of light. It is established that the plasmon-resonance parameters found in the metamaterial are almost independent of the sizes of the AsSb nanoinclusions. The plasmon-resonance energy is (1.47 ± 0.01) eV, while its full width at half maximum is (0.19 ± 0.01) eV.

• OSTI ID: 22469679
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 12 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ALUMINIUM ARSENIDES
ANNEALING
EV RANGE
GALLIUM ARSENIDES
MATRIX MATERIALS
METALS
METAMATERIALS
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
PLASMONS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
VISIBLE RADIATION