Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix

Journal Article · Thu Aug 15 04:00:00 EDT 2013 · Semiconductors

DOI:https://doi.org/10.1134/S1063782613080198· OSTI ID:22210582

Ushanov, V. I.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R. ^[1]

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1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

The optical properties of metal-semiconductor metamaterials based on an AlGaAs matrix are studied. The specific feature of these materials is that there are As and AsSb nanoinclusion arrays which modify the dielectric properties of the material. These nanoinclusions are randomly arranged in the medium or form a Bragg structure with a reflectance peak at a wavelength close to 750 nm, corresponding to the transparency region of the matrix. The reflectance spectra are studied for s- and p-polarized light at different angles of incidence. It is shown that (i) As nanoinclusion arrays only slightly influence the optical properties of the medium in the wavelength range 700-900 nm, (ii) chaotic AsSb nanoinclusion arrays cause strong scattering of light, and (iii) the spatial periodicity in the arrangement of AsSb nanoinclusions is responsible for Bragg resonance in the optical reflection.

• OSTI ID: 22210582
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 8 Vol. 47; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
DIELECTRIC PROPERTIES
GALLIUM ARSENIDES
INCIDENCE ANGLE
OPACITY
OPTICAL REFLECTION
SEMICONDUCTOR MATERIALS
WAVELENGTHS