Surface passivation of (100) GaSb using self-assembled monolayers of long-chain octadecanethiol

Journal Article · Sun May 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4949754· OSTI ID:22611711

Kaniewski, J.; Jurenczyk, J.; Jasik, A.; Czuba, K. ^[1]; Walkiewicz, A. E. ^[2]; Szade, J. ^[3]

---

1. Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
2. University of Warsaw, Biological and Chemical Research Centre, Al. Zwirki i Wigury 101, 02-089 Warsaw (Poland)
3. A. Chełkowski Institute of Physics, University of Silesia, ul. Uniwersytecka 4, 40-007 Katowice (Poland)

The passivation of (100) GaSb surface was investigated by means of the long-chain octadecanethiol (ODT) self-assembled monolayer (SAM). The properties of ODT SAM on (100) GaSb were characterized by the atomic force microscopy using Kelvin probe force microscopy mode and X-ray photoelectron spectroscopy. The chemical treatment of 10 mM ODT-C{sub 2}H{sub 5}OH has been applied to the passivation of a type-II superlattice InAs/GaSb photodetector. The electrical measurements indicate that the current density was reduced by one order of magnitude as compared to an unpassivated photodetector.

• OSTI ID: 22611711
• Journal Information: AIP Advances, Vol. 6, Issue 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
COMPARATIVE EVALUATIONS
CURRENT DENSITY
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
OXIDATION
PASSIVATION
PHOTODETECTORS
SUPERLATTICES
SURFACES
X-RAY PHOTOELECTRON SPECTROSCOPY