Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices
- Xi’an Institute of Optics and Precision Mechanics, Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of Chinese Academy of Science (China)
- University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering (China)
- Xi’an Jiaotong University, Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering (China)
The surface passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices(T2SLs) photodetectors employing diverse voltage and current conditions of sulfide treatment passivation was presented. The superlattices were grown on GaSb substrate by molecular beam epitaxy technology. The circle pixel devices in the diameter of 200 μm with 5 μm at mid-infrared and 14 μm at long-infrared 100% cutoff wavelength were fabricated. Compared to only SiO{sub 2} encapsulation passivation and unpassivated detectors, the dark current density, which takes into account surface leakage current, was reduced by approximately three orders of magnitude and the R0A-product was six times higher by sulfide treatment. Besides, detectors passivated through 22 V 15 mA sulfur treated, the responsivity of was 0.95A/W and QE was 0.44 at 2.6 μm. As for the wavelength of 5.3 μm, the responsivity and QE were 1.95 A/W and 0.45 severally.
- OSTI ID:
- 22950372
- Journal Information:
- Optical and Quantum Electronics, Vol. 51, Issue 3; Other Information: Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 0306-8919
- Country of Publication:
- United States
- Language:
- English
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