Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

Journal Article · Mon May 23 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4947926· OSTI ID:22608698

Kunj, Saurabh; Sreenivas, K. ^[1]

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1. Department of Physics & Astrophysics, University of Delhi, Delhi-110007 (India)

Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O{sub 2}/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

• OSTI ID: 22608698
• Journal Information: AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON
DEFECTS
GRAIN ORIENTATION
MAGNETRONS
OXYGEN
PHOTOLUMINESCENCE
QUARTZ
RADIOWAVE RADIATION
SPECTRA
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
ULTRAVIOLET RADIATION
X-RAY DIFFRACTION
ZINC
ZINC OXIDES