Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering
Journal Article
·
· AIP Conference Proceedings
- Department of Physics & Astrophysics, University of Delhi, Delhi-110007 (India)
Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O{sub 2}/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.
- OSTI ID:
- 22608698
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1731; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structural and optical characterization of high-quality ZnO thin films deposited by reactive RF magnetron sputtering
Photoluminescence Characterization of ZnO Thin Films Grown by RF- Sputtering
Luminescence properties of ZnO layers grown on Si-on-insulator substrates
Journal Article
·
Fri Mar 15 00:00:00 EDT 2013
· Materials Research Bulletin
·
OSTI ID:22290382
Photoluminescence Characterization of ZnO Thin Films Grown by RF- Sputtering
Journal Article
·
Wed Mar 30 00:00:00 EDT 2011
· AIP Conference Proceedings
·
OSTI ID:21511545
Luminescence properties of ZnO layers grown on Si-on-insulator substrates
Journal Article
·
Mon Oct 02 00:00:00 EDT 2006
· Applied Physics Letters
·
OSTI ID:20860963