Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

Journal Article · Mon May 23 04:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4947916· OSTI ID:22608689

Panda, Padmalochan; Dash, S. ^[1]; Krishna, Nanda Gopala ^[2]

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1. Materials Science Group, IGCAR, Kalpakkam, 603102 (India)
2. Corrosion Science and Technology Group, IGCAR, Kalpakkam, 603102 (India)

Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

• OSTI ID: 22608689
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1731; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
BINDING ENERGY
CHROMIUM ADDITIONS
CONCENTRATION RATIO
CRYSTAL STRUCTURE
DOPED MATERIALS
GRAIN ORIENTATION
HARDNESS
MAGNETRONS
PHOTOEMISSION
PRESSURE RANGE GIGA PA
SUBSTRATES
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY