Influence of c-axis orientation and scandium concentration on infrared active modes of magnetron sputtered Sc{sub x}Al{sub 1−x}N thin films

Journal Article · Sun Dec 15 23:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4850735· OSTI ID:22217763

Mayrhofer, P. M.; Bittner, A.; Schmid, U. ^[1]; Eisenmenger-Sittner, C. ^[2]; Euchner, H. ^[3]

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1. Institute of Sensor and Actuator Systems, Vienna University of Technology, Floragasse 7, 1040 Vienna (Austria)
2. Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstrasse 8, 1040 Vienna (Austria)
3. Institute of Materials Science and Technology, Vienna University of Technology, Karlsplatz 13, 1040 Vienna (Austria)

Doping of wurtzite aluminium nitride (AlN) with scandium (Sc) significantly enhances the piezoelectric properties of AlN. Sc{sub x}Al{sub 1−x}N thin films with different Sc concentrations (x = 0 to 0.15) were deposited by DC reactive magnetron sputtering. Infrared (IR) absorbance spectroscopy was applied to investigate the Sc concentration dependent shift of the IR active modes E{sub 1}(TO) and A{sub 1}(TO). These results are compared to ab initio simulations, being in excellent agreement with the experimental findings. In addition, IR spectroscopy is established as an economical and fast method to distinguish between thin films with a high degree of c-axis orientation and those exhibiting mixed orientations.

• OSTI ID: 22217763
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 103; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ALUMINIUM NITRIDES
DEPOSITION
DEPOSITS
MAGNETRONS
ORIENTATION
PIEZOELECTRICITY
SCANDIUM
SEMICONDUCTOR MATERIALS
SIMULATION
SPECTROSCOPY
SPUTTERING
THIN FILMS