Influence of nitrogen growth pressure on the ferromagnetic properties of Cr-doped AlN thin films

Journal Article · Mon May 23 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1940131· OSTI ID:20702400

Jun, Zhang; Li, X Z; Xu, B; Sellmyer, D J ^[1]

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1. Department of Physics and Astronomy and Center for Materials Research and Analysis, University of Nebraska, Lincoln, Nebraska 68588 (United States)

We report the magnetic properties of Cr-doped AlN thin films grown by reactive magnetron sputtering under various nitrogen pressures. Ferromagnetism is observed up to the highest temperature measured, 400 K, and shows strong dependence on the Cr concentration and, especially, the nitrogen growth pressure. By varying the nitrogen pressure during film growth, the magnetic properties of the films can be changed while keeping a constant Cr concentration. The ferromagnetism is enhanced in the films that were grown at low nitrogen pressures and thus nitrogen deficient, suggesting an important role of defects in the ferromagnetism of this material.

• OSTI ID: 20702400
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 86; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CHROMIUM
CRYSTAL GROWTH
DEPOSITION
DOPED MATERIALS
FERROMAGNETIC MATERIALS
FERROMAGNETISM
MAGNETIC PROPERTIES
MAGNETIC SEMICONDUCTORS
NITROGEN
SPUTTERING
THIN FILMS