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Title: Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

Abstract

CH{sub 4} gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10{sup −3} S/cm and 11.5%, respectively.

Authors:
; ; ;  [1];  [1];  [2];  [1];  [2];  [3]; ;  [4];  [1];  [5]
  1. NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)
  2. (Malaysia)
  3. Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University ofMalaya, 50603 Kuala Lumpur (Malaysia)
  4. Research Chair of Targeting and Treatment Cancer Using Nanoparticles, Department Of Biochemistry, College Of Science, King Saud University, P.O: 2454 Riyadh 11451 (Saudi Arabia)
  5. (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)
Publication Date:
OSTI Identifier:
22608614
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1733; Journal Issue: 1; Conference: IC-NET 2015: International conference on nano-electronic technology devices and materials 2015, Selangor (Malaysia), 27 Feb - 2 Mar 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; DOPED MATERIALS; METHANE; NANOSTRUCTURES; SENSITIVITY; SENSORS; SPIN; SPIN-ON COATING; THIN FILMS; ZINC OXIDES

Citation Formats

Shafura, A. K., E-mail: shafura@ymail.com, Azhar, N. E. I., Uzer, M., Mamat, M. H., Sin, N. D. Md., Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor, Saurdi, I., Faculty of Electrical Engineering, Universiti Teknologi MARA Sarawak, Kampus Kota Samarahan Jalan Meranek, Sarawak, Shuhaimi, A., Alrokayan, Salman A. H., Khan, Haseeb A., Rusop, M., E-mail: nanouitm@gmail.com, and NANO-SciTech Centre. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications. United States: N. p., 2016. Web. doi:10.1063/1.4948883.
Shafura, A. K., E-mail: shafura@ymail.com, Azhar, N. E. I., Uzer, M., Mamat, M. H., Sin, N. D. Md., Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor, Saurdi, I., Faculty of Electrical Engineering, Universiti Teknologi MARA Sarawak, Kampus Kota Samarahan Jalan Meranek, Sarawak, Shuhaimi, A., Alrokayan, Salman A. H., Khan, Haseeb A., Rusop, M., E-mail: nanouitm@gmail.com, & NANO-SciTech Centre. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications. United States. doi:10.1063/1.4948883.
Shafura, A. K., E-mail: shafura@ymail.com, Azhar, N. E. I., Uzer, M., Mamat, M. H., Sin, N. D. Md., Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor, Saurdi, I., Faculty of Electrical Engineering, Universiti Teknologi MARA Sarawak, Kampus Kota Samarahan Jalan Meranek, Sarawak, Shuhaimi, A., Alrokayan, Salman A. H., Khan, Haseeb A., Rusop, M., E-mail: nanouitm@gmail.com, and NANO-SciTech Centre. Wed . "Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications". United States. doi:10.1063/1.4948883.
@article{osti_22608614,
title = {Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications},
author = {Shafura, A. K., E-mail: shafura@ymail.com and Azhar, N. E. I. and Uzer, M. and Mamat, M. H. and Sin, N. D. Md. and Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor and Saurdi, I. and Faculty of Electrical Engineering, Universiti Teknologi MARA Sarawak, Kampus Kota Samarahan Jalan Meranek, Sarawak and Shuhaimi, A. and Alrokayan, Salman A. H. and Khan, Haseeb A. and Rusop, M., E-mail: nanouitm@gmail.com and NANO-SciTech Centre},
abstractNote = {CH{sub 4} gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10{sup −3} S/cm and 11.5%, respectively.},
doi = {10.1063/1.4948883},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1733,
place = {United States},
year = {2016},
month = {7}
}