Synthesis, Fabrication and Characterization of ZnO-Based Thin Films Prepared by Sol–Gel Process and H{sub 2} Gas Sensing Performance
- Jadavpur University, Department of Electronics and Telecommunication Engineering (India)
In this paper, an attempt is made to deposit ZnO thin films using sol–gel process followed by dip-coating method on p-silicon (100) substrates for intended application as a hydrogen gas sensor owing to the low toxic nature and thermal stability of ZnO. The thin films are annealed under annealing temperatures of 350, 450 and 550 °C for 25 min. The crystalline quality of the fabricated thin films is then analyzed by field-emission scanning electron microscopy and transmission electron microscope. The gas sensing performance analysis of ZnO thin films is demonstrated at different annealing temperatures and hydrogen gas concentrations ranging from 100 to 3000 ppm. Results obtained show that the sensitivity is significantly improved as annealing temperature increases with maximum sensitivity being achieved at 550 °C annealing temperature and operating temperature of 150 °C. Hence, the modified ZnO thin films can be applicable as H{sub 2} gas sensing device showing to the improved performance in comparison with unmodified thin-film sensor.
- OSTI ID:
- 22860468
- Journal Information:
- Journal of Materials Engineering and Performance, Journal Name: Journal of Materials Engineering and Performance Journal Issue: 6 Vol. 27; ISSN 1059-9495; ISSN JMEPEG
- Country of Publication:
- United States
- Language:
- English
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