Growth and structure of In{sub 0.5}Ga{sub 0.5}Sb quantum dots on GaP(001)

Journal Article · Mon Sep 05 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4962273· OSTI ID:22594292

Sala, E. M.; Stracke, G.; Schlichting, S.; Nippert, F.; Callsen, G.; Strittmatter, A.; Bimberg, D. ^[1]; Selve, S. ^[2]; Niermann, T.; Lehmann, M. ^[3]

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1. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin (Germany)
2. Zentraleinrichtung Elektronenmikroskopie, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin (Germany)
3. Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin (Germany)

Stranski-Krastanov (SK) growth of In{sub 0.5}Ga{sub 0.5}Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially suppressed for GaAs interlayer thicknesses below 6 monolayers. QD densities vary from 5 × 10{sup 9} to 2 × 10{sup 11} cm{sup −2} depending on material deposition and Sb-flush time. When In{sub 0.5}Ga{sub 0.5}Sb growth is carried out without Sb-flush, the QD density is generally decreased, and up to 60% larger QDs are obtained.

• OSTI ID: 22594292
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 109; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DENSITY
DEPOSITION
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ANTIMONIDES
NUCLEATION
QUANTUM DOTS
THICKNESS
VAPOR PHASE EPITAXY
VAPORS