Homoepitaxial growth of β-Ga{sub 2}O{sub 3} thin films by low pressure chemical vapor deposition
- Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106 (United States)
- United States Naval Research Laboratory, Washington, DC 20375 (United States)
This paper presents the homoepitaxial growth of phase pure (010) β-Ga{sub 2}O{sub 3} thin films on (010) β-Ga{sub 2}O{sub 3} substrate by low pressure chemical vapor deposition. The effects of growth temperature on the surface morphology and crystal quality of the thin films were systematically investigated. The thin films were synthesized using high purity metallic gallium (Ga) and oxygen (O{sub 2}) as precursors for gallium and oxygen, respectively. The surface morphology and structural properties of the thin films were characterized by atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. Material characterization indicates the growth temperature played an important role in controlling both surface morphology and crystal quality of the β-Ga{sub 2}O{sub 3} thin films. The smallest root-mean-square surface roughness of ∼7 nm was for thin films grown at a temperature of 950 °C, whereas the highest growth rate (∼1.3 μm/h) with a fixed oxygen flow rate was obtained for the epitaxial layers grown at 850 °C.
- OSTI ID:
- 22591672
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 108; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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