Thermal Conductivity of β-Phase Ga2O3 and (AlxGa1–x)2O3 Heteroepitaxial Thin Films

Song, Yiwen; Ranga, Praneeth; Zhang, Yingying; Feng, Zixuan; Huang, Hsien-Lien; Santia, Marco D.; Badescu, Stefan C.; Gonzalez-Valle, C. Ulises; Perez, Carlos; Ferri, Kevin; Lavelle, Robert M.; Snyder, David W.; Klein, Brianna A.; Deitz, Julia; Baca, Albert G.; Maria, Jon-Paul; Ramos-Alvarado, Bladimir; Hwang, Jinwoo; Zhao, Hongping; Wang, Xiaojia; Krishnamoorthy, Sriram; Foley, Brian M.; Choi, Sukwon

doi:10.1021/acsami.1c08506

Title: Thermal Conductivity of β-Phase Ga₂O₃ and (Al_xGa_1–x)₂O₃ Heteroepitaxial Thin Films

Journal Article · Mon Aug 09 00:00:00 EDT 2021 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.1c08506· OSTI ID:1817728

Song, Yiwen ^[1]; Ranga, Praneeth ^[2]; Zhang, Yingying ^[3]; Feng, Zixuan ^[4]; Huang, Hsien-Lien ^[4]; Santia, Marco D. ^[5]; Badescu, Stefan C. ^[5];

^[1]; Perez, Carlos ^[1]; Ferri, Kevin ^[1]; Lavelle, Robert M. ^[1]; Snyder, David W. ^[1]; Klein, Brianna A. ^[6]; Deitz, Julia ^[6]; Baca, Albert G. ^[6]; Maria, Jon-Paul ^[1];

^[1]; Hwang, Jinwoo ^[4];

^[4];

^[3] more »

Pennsylvania State Univ., University Park, PA (United States)
Univ. of Utah, Salt Lake City, UT (United States)
Univ. of Minnesota, Minneapolis, MN (United States)
The Ohio State Univ., Columbus, OH (United States)
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Heteroepitaxy of β-phase gallium oxide (β-Ga₂O₃) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the film thickness and crystallinity on the thermal conductivity of ($$\bar{2}01$$)-oriented β-Ga₂O₃ heteroepitaxial thin films were investigated. Unintentionally doped β-Ga₂O₃ thin films were grown on c-plane sapphire substrates with off-axis angles of 0° and 6° toward $$\langle$$$$11\bar{2}0$$$$\rangle$$ via metal–organic vapor phase epitaxy (MOVPE) and low-pressure chemical vapor deposition. The surface morphology and crystal quality of the β-Ga₂O₃ thin films were characterized using scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The thermal conductivities of the β-Ga₂O₃ films were measured via time-domain thermoreflectance. The interface quality was studied using scanning transmission electron microscopy. The measured thermal conductivities of the submicron-thick β-Ga₂O₃ thin films were relatively low as compared to the intrinsic bulk value. The measured thin film thermal conductivities were compared with the Debye–Callaway model incorporating phononic parameters derived from first-principles calculations. The comparison suggests that the reduction in the thin film thermal conductivity can be partially attributed to the enhanced phonon-boundary scattering when the film thickness decreases. They were found to be a strong function of not only the layer thickness but also the film quality, resulting from growth on substrates with different offcut angles. Growth of β-Ga₂O₃ films on 6° offcut sapphire substrates was found to result in higher crystallinity and thermal conductivity than films grown on on-axis c-plane sapphire. However, the β-Ga₂O₃ films grown on 6° offcut sapphire exhibit a lower thermal boundary conductance at the β-Ga₂O₃/sapphire heterointerface. In addition, the thermal conductivity of MOVPE-grown ($$\bar{2}01$$)-oriented β-(Al_xGa_1–x)₂O₃ thin films with Al compositions ranging from 2% to 43% was characterized. Because of phonon-alloy disorder scattering, the β-(Al_xGa_1–x)₂O₃ films exhibit lower thermal conductivities (2.8–4.7 W/m∙K) than the β-Ga₂O₃ thin films. The dominance of the alloy disorder scattering in β-(Al_xGa_1–x)₂O₃ is further evidenced by the weak temperature dependence of the thermal conductivity. This work provides fundamental insight into the physical interactions that govern phonon transport within heteroepitaxially grown β-phase Ga₂O₃ and (Al_xGa_1–x)₂O₃ thin films and lays the groundwork for the thermal modeling and design of β-Ga₂O₃ electronic and optoelectronic devices.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); National Resource Council (NRC)

Grant/Contract Number:: NA0003525; FA9550-17-1-0141; FA9550-18-1-0507; CBET-1804840; DMR-1755479; FA9550-18-1-0479; FA9550-18RYCOR098; FA9550-18-D-0002

OSTI ID:: 1817728

Report Number(s):: SAND-2021-9937J; 698046

Journal Information:: ACS Applied Materials and Interfaces, Vol. 13, Issue 32; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

References (67)

MOCVD epitaxy of β -(Al _x Ga _1−x ) ₂ O ₃ thin films on (010) Ga ₂ O ₃ substrates and N-type doping Anhar Uddin Bhuiyan, A. F. M.; Feng, Zixuan; Johnson, Jared M. Applied Physics Letters, Vol. 115, Issue 12 https://doi.org/10.1063/1.5123495	journal	September 2019
Step-flow growth in homoepitaxy of β -Ga ₂ O ₃ (100)—The influence of the miscut direction and faceting Schewski, R.; Lion, K.; Fiedler, A. APL Materials, Vol. 7, Issue 2 https://doi.org/10.1063/1.5054943	journal	February 2019
Modulation-doped β-(Al _0.2 Ga _0.8 ) ₂ O ₃ /Ga ₂ O ₃ field-effect transistor Krishnamoorthy, Sriram; Xia, Zhanbo; Joishi, Chandan Applied Physics Letters, Vol. 111, Issue 2 https://doi.org/10.1063/1.4993569	journal	July 2017
Heat transport in amorphous silicon: Interplay between morphology and disorder He, Yuping; Donadio, Davide; Galli, Giulia Applied Physics Letters, Vol. 98, Issue 14 https://doi.org/10.1063/1.3574366	journal	April 2011
Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors Chatterjee, Bikramjit; Zeng, Ke; Nordquist, Christopher D. IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol. 9, Issue 12 https://doi.org/10.1109/tcpmt.2019.2923356	journal	December 2019
Enthalpy and Heat-Capacity Standard Reference Material: Synthetic Sapphire (Alpha-Al2O3) From 10 to 2250 K Ditmars, D. A.; Ishihara, S.; Chang, S. S. Journal of Research of the National Bureau of Standards, Vol. 87, Issue 2 https://doi.org/10.6028/jres.087.012	journal	March 1982
Integration of polycrystalline Ga ₂ O ₃ on diamond for thermal management Cheng, Zhe; Wheeler, Virginia D.; Bai, Tingyu Applied Physics Letters, Vol. 116, Issue 6 https://doi.org/10.1063/1.5125637	journal	February 2020
Size effects in the thermal conductivity of gallium oxide ( β -Ga ₂ O ₃ ) films grown via open-atmosphere annealing of gallium nitride Szwejkowski, Chester J.; Creange, Nicole C.; Sun, Kai Journal of Applied Physics, Vol. 117, Issue 8 https://doi.org/10.1063/1.4913601	journal	February 2015
QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502 https://doi.org/10.1088/0953-8984/21/39/395502	journal	September 2009
Phase transformation in MOCVD growth of (Al _x Ga _1−x ) ₂ O ₃ thin films Bhuiyan, A. F. M. Anhar Uddin; Feng, Zixuan; Johnson, Jared M. APL Materials, Vol. 8, Issue 3 https://doi.org/10.1063/1.5140345	journal	March 2020
Lattice thermal conductivity of group-IV and III–V semiconductor alloys Adachi, Sadao Journal of Applied Physics, Vol. 102, Issue 6 https://doi.org/10.1063/1.2779259	journal	September 2007
A review of Ga ₂ O ₃ materials, processing, and devices Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H. Applied Physics Reviews, Vol. 5, Issue 1 https://doi.org/10.1063/1.5006941	journal	March 2018
Low-temperature elastic constants of monocrystal corundum (α-Al ₂ O ₃ ) Tarumi, R.; Ledbetter, H.; Ogi, H. Philosophical Magazine, Vol. 93, Issue 36 https://doi.org/10.1080/14786435.2013.837225	journal	December 2013
Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates Shen, X. Q.; Matsuhata, H.; Okumura, H. Applied Physics Letters, Vol. 86, Issue 2 https://doi.org/10.1063/1.1849836	journal	January 2005
r -axis sound speed and elastic properties of sapphire single crystals Winey, J. M.; Gupta, Y. M.; Hare, D. E. Journal of Applied Physics, Vol. 90, Issue 6 https://doi.org/10.1063/1.1391420	journal	September 2001
Analysis of heat flow in layered structures for time-domain thermoreflectance Cahill, David G. Review of Scientific Instruments, Vol. 75, Issue 12 https://doi.org/10.1063/1.1819431	journal	December 2004
Homoepitaxial growth of β-Ga ₂ O ₃ thin films by low pressure chemical vapor deposition Rafique, Subrina; Han, Lu; Tadjer, Marko J. Applied Physics Letters, Vol. 108, Issue 18 https://doi.org/10.1063/1.4948944	journal	May 2016
Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD Alema, Fikadu; Hertog, Brian; Osinsky, Andrei Journal of Crystal Growth, Vol. 475 https://doi.org/10.1016/j.jcrysgro.2017.06.001	journal	October 2017
Heteroepitaxy of N-type β-Ga ₂ O ₃ thin films on sapphire substrate by low pressure chemical vapor deposition Rafique, Subrina; Han, Lu; Neal, Adam T. Applied Physics Letters, Vol. 109, Issue 13 https://doi.org/10.1063/1.4963820	journal	September 2016
Lattice thermal conductivity in β-Ga2O3 from first principles Santia, Marco D.; Tandon, Nandan; Albrecht, J. D. Applied Physics Letters, Vol. 107, Issue 4 https://doi.org/10.1063/1.4927742	journal	July 2015
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures Ambacher, O.; Smart, J.; Shealy, J. R. Journal of Applied Physics, Vol. 85, Issue 6 https://doi.org/10.1063/1.369664	journal	March 1999
Band offsets of (100) β -(Al _x Ga _1−x ) ₂ O ₃ / β -Ga ₂ O ₃ heterointerfaces grown via MOCVD Bhuiyan, A. F. M. Anhar Uddin; Feng, Zixuan; Johnson, Jared M. Applied Physics Letters, Vol. 117, Issue 25 https://doi.org/10.1063/5.0031584	journal	December 2020
MOCVD homoepitaxy of Si-doped (010) β-Ga ₂ O ₃ thin films with superior transport properties Feng, Zixuan; Anhar Uddin Bhuiyan, A. F. M.; Karim, Md Rezaul Applied Physics Letters, Vol. 114, Issue 25 https://doi.org/10.1063/1.5109678	journal	June 2019
Low 1014 cm−3 free carrier concentration in epitaxial β-Ga ₂ O ₃ grown by MOCVD Alema, Fikadu; Zhang, Yuewei; Osinsky, Andrei APL Materials, Vol. 8, Issue 2 https://doi.org/10.1063/1.5132752	journal	February 2020
Thickness-dependent thermal conductivity of mechanically exfoliated β -Ga ₂ O ₃ thin films Zhang, Yingying; Su, Qun; Zhu, Jie Applied Physics Letters, Vol. 116, Issue 20 https://doi.org/10.1063/5.0004984	journal	May 2020
Low pressure chemical vapor deposition of β-Ga ₂ O ₃ thin films: Dependence on growth parameters Feng, Zixuan; Karim, Md Rezaul; Zhao, Hongping APL Materials, Vol. 7, Issue 2 https://doi.org/10.1063/1.5054713	journal	February 2019
Electronic and thermodynamic properties of β-Ga2O3 He, Haiying; Blanco, Miguel A.; Pandey, Ravindra Applied Physics Letters, Vol. 88, Issue 26 https://doi.org/10.1063/1.2218046	journal	June 2006
Thermal conductivity of bulk and thin film [beta]-Ga2O3 measured by the 3[omega] technique Blumenschein, Nicholas; Slomski, Michael; Kaess, Felix Oxide-based Materials and Devices IX https://doi.org/10.1117/12.2288267	conference	March 2018
Full bandgap defect state characterization of β -Ga ₂ O ₃ grown by metal organic chemical vapor deposition Ghadi, Hemant; McGlone, Joe F.; Jackson, Christine M. APL Materials, Vol. 8, Issue 2 https://doi.org/10.1063/1.5142313	journal	February 2020
Si-doped β -(Al _0.26 Ga _0.74 ) ₂ O ₃ thin films and heterostructures grown by metalorganic vapor-phase epitaxy Ranga, Praneeth; Rishinaramangalam, Ashwin; Varley, Joel Applied Physics Express, Vol. 12, Issue 11 https://doi.org/10.7567/1882-0786/ab47b8	journal	October 2019
Growth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor deposition Zhong, Can-Tao; Zhang, Guo-Yi Rare Metals, Vol. 33, Issue 6 https://doi.org/10.1007/s12598-013-0163-5	journal	December 2013
Low temperature homoepitaxy of (010) β -Ga ₂ O ₃ by metalorganic vapor phase epitaxy: Expanding the growth window Bhattacharyya, Arkka; Ranga, Praneeth; Roy, Saurav Applied Physics Letters, Vol. 117, Issue 14 https://doi.org/10.1063/5.0023778	journal	October 2020
High-temperature low-pressure chemical vapor deposition of β-Ga ₂ O ₃ Zhang, Yuxuan; Feng, Zixuan; Karim, Md Rezaul Journal of Vacuum Science & Technology A, Vol. 38, Issue 5 https://doi.org/10.1116/6.0000360	journal	September 2020
Guest Editorial: The dawn of gallium oxide microelectronics Higashiwaki, Masataka; Jessen, Gregg H. Applied Physics Letters, Vol. 112, Issue 6 https://doi.org/10.1063/1.5017845	journal	February 2018
MOCVD growth of β-phase (Al _x Ga _1−x ) ₂ O ₃ on ( 2 ¯01) β-Ga ₂ O ₃ substrates Bhuiyan, A. F. M. Anhar Uddin; Feng, Zixuan; Johnson, Jared M. Applied Physics Letters, Vol. 117, Issue 14 https://doi.org/10.1063/5.0025478	journal	October 2020
Variations of Acoustic and Diffuse Mismatch Models in Predicting Thermal-Boundary Resistance De Bellis, Lisa; Phelan, Patrick E.; Prasher, Ravi S. Journal of Thermophysics and Heat Transfer, Vol. 14, Issue 2 https://doi.org/10.2514/2.6525	journal	April 2000
Thermal characterization of gallium oxide Schottky barrier diodes Chatterjee, Bikramjit; Jayawardena, Asanka; Heller, Eric Review of Scientific Instruments, Vol. 89, Issue 11 https://doi.org/10.1063/1.5053621	journal	November 2018
Compensation in ( 2 ¯ 01 ) homoepitaxial β -Ga ₂ O ₃ thin films grown by metalorganic vapor-phase epitaxy Eisner, Brian A.; Ranga, Praneeth; Bhattacharyya, Arkka Journal of Applied Physics, Vol. 128, Issue 19 https://doi.org/10.1063/5.0022043	journal	November 2020
Electro-thermal co-design of β -(Al _x Ga _1-x ) ₂ O ₃ /Ga ₂ O ₃ modulation doped field effect transistors Chatterjee, Bikramjit; Song, Yiwen; Lundh, James Spencer Applied Physics Letters, Vol. 117, Issue 15 https://doi.org/10.1063/5.0021275	journal	October 2020
Thermal Conductivity of Aluminum Scandium Nitride for 5G Mobile Applications and Beyond Song, Yiwen; Perez, Carlos; Esteves, Giovanni ACS Applied Materials & Interfaces, Vol. 13, Issue 16 https://doi.org/10.1021/acsami.1c02912	journal	April 2021
Thermal Transport across Ion-Cut Monocrystalline β-Ga ₂ O ₃ Thin Films and Bonded β-Ga ₂ O ₃ –SiC Interfaces Cheng, Zhe; Mu, Fengwen; You, Tiangui ACS Applied Materials & Interfaces, Vol. 12, Issue 40 https://doi.org/10.1021/acsami.0c11672	journal	September 2020
Anisotropy-induced polarization mixture of surface acoustic waves in $Ga N ∕ c$ -sapphire heterostructures Pedrós, J.; Calle, F.; Grajal, J. Physical Review B, Vol. 72, Issue 7 https://doi.org/10.1103/PhysRevB.72.075306	journal	August 2005
Evaluation of Low-Temperature Saturation Velocity in $\beta$ -(Al _x Ga _1–x ) ₂ O ₃ /Ga ₂ O ₃ Modulation-Doped Field-Effect Transistors Zhang, Yuewei; Xia, Zhanbo; Mcglone, Joe IEEE Transactions on Electron Devices, Vol. 66, Issue 3 https://doi.org/10.1109/TED.2018.2889573	journal	March 2019
Thermodynamic Properties of Gold Arblaster, J. W. Journal of Phase Equilibria and Diffusion, Vol. 37, Issue 2 https://doi.org/10.1007/s11669-016-0449-z	journal	January 2016
Significantly reduced thermal conductivity in β -(Al _0.1 Ga _0.9 ) ₂ O ₃ /Ga ₂ O ₃ superlattices Cheng, Zhe; Tanen, Nicholas; Chang, Celesta Applied Physics Letters, Vol. 115, Issue 9 https://doi.org/10.1063/1.5108757	journal	August 2019
2D Materials for Universal Thermal Imaging of Micro- and Nanodevices: An Application to Gallium Oxide Electronics Lundh, James Spencer; Zhang, Tianyi; Zhang, Yuewei ACS Applied Electronic Materials, Vol. 2, Issue 9 https://doi.org/10.1021/acsaelm.0c00574	journal	August 2020
ShengBTE: A solver of the Boltzmann transport equation for phonons Li, Wu; Carrete, Jesús; A. Katcho, Nebil Computer Physics Communications, Vol. 185, Issue 6 https://doi.org/10.1016/j.cpc.2014.02.015	journal	June 2014
Thermal annealing effect on β-Ga ₂ O ₃ thin film solar blind photodetector heteroepitaxially grown on sapphire substrate: Thermal annealing effect on ß-Ga ₂ O ₃ thin film solar blind photodetector Rafique, Subrina; Han, Lu; Zhao, Hongping physica status solidi (a), Vol. 214, Issue 8 https://doi.org/10.1002/pssa.201700063	journal	May 2017
Thermal conductance across β-Ga ₂ O ₃ -diamond van der Waals heterogeneous interfaces Cheng, Zhe; Yates, Luke; Shi, Jingjing APL Materials, Vol. 7, Issue 3 https://doi.org/10.1063/1.5089559	journal	March 2019
Influence of incoherent twin boundaries on the electrical properties of β-Ga ₂ O ₃ layers homoepitaxially grown by metal-organic vapor phase epitaxy Fiedler, A.; Schewski, R.; Baldini, M. Journal of Applied Physics, Vol. 122, Issue 16 https://doi.org/10.1063/1.4993748	journal	October 2017
Phonon mode contributions to thermal conductivity of pristine and defective β-Ga ₂ O ₃ Yan, Zhequan; Kumar, Satish Physical Chemistry Chemical Physics, Vol. 20, Issue 46 https://doi.org/10.1039/C8CP05139A	journal	January 2018
Low Temperature Heat Capacities of Inorganic Solids. XI. The Heat Capacity of β-Gallium Oxide from 15 to 300°K. ¹ Adams, George B.; Johnston, Herrick L. Journal of the American Chemical Society, Vol. 74, Issue 19 https://doi.org/10.1021/ja01139a018	journal	October 1952
High temperature thermal conductivity of irradiated and non-irradiated Schulz, B. Journal of Nuclear Materials, Vol. 155-157 https://doi.org/10.1016/0022-3115(88)90269-3	journal	July 1988
Nanoscale thermal transport. II. 2003–2012 Cahill, David G.; Braun, Paul V.; Chen, Gang Applied Physics Reviews, Vol. 1, Issue 1 https://doi.org/10.1063/1.4832615	journal	March 2014
Synthesis of wide bandgap Ga ₂ O ₃ ( E _g ∼ 4.6-4.7 eV) thin films on sapphire by low pressure chemical vapor deposition : Synthesis of wide bandgap Ga Rafique, Subrina; Han, Lu; Zhao, Hongping physica status solidi (a), Vol. 213, Issue 4 https://doi.org/10.1002/pssa.201532711	journal	November 2015
LPCVD homoepitaxy of Si doped β-Ga ₂ O ₃ thin films on (010) and (001) substrates Rafique, Subrina; Karim, Md Rezaul; Johnson, Jared M. Applied Physics Letters, Vol. 112, Issue 5 https://doi.org/10.1063/1.5017616	journal	January 2018
Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control Kuball, M. Surface and Interface Analysis, Vol. 31, Issue 10 https://doi.org/10.1002/sia.1134	journal	January 2001
A frequency-domain thermoreflectance method for the characterization of thermal properties Schmidt, Aaron J.; Cheaito, Ramez; Chiesa, Matteo Review of Scientific Instruments, Vol. 80, Issue 9 https://doi.org/10.1063/1.3212673	journal	September 2009
Structures and energetics of Ga ₂ O ₃ polymorphs Yoshioka, S.; Hayashi, H.; Kuwabara, A. Journal of Physics: Condensed Matter, Vol. 19, Issue 34 https://doi.org/10.1088/0953-8984/19/34/346211	journal	July 2007
MOCVD growth of high purity Ga ₂ O ₃ epitaxial films using trimethylgallium precursor Seryogin, George; Alema, Fikadu; Valente, Nicholas Applied Physics Letters, Vol. 117, Issue 26 https://doi.org/10.1063/5.0031484	journal	December 2020
Interdependence of Electronic and Thermal Transport in Al _x Ga _1–x N Channel HEMTs Chatterjee, Bikramjit; Lundh, James Spencer; Song, Yiwen IEEE Electron Device Letters, Vol. 41, Issue 3 https://doi.org/10.1109/LED.2020.2969515	journal	March 2020
Anisotropic thermal conductivity in single crystal β-gallium oxide Guo, Zhi; Verma, Amit; Wu, Xufei Applied Physics Letters, Vol. 106, Issue 11 https://doi.org/10.1063/1.4916078	journal	March 2015
Raman tensor elements of β-Ga2O3 Kranert, Christian; Sturm, Chris; Schmidt-Grund, Rüdiger Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep35964	journal	November 2016
Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy Oshima, Yuichi; Vίllora, Encarnaciόn G.; Shimamura, Kiyoshi Journal of Crystal Growth, Vol. 410 https://doi.org/10.1016/j.jcrysgro.2014.10.038	journal	January 2015
Towards High-Mobility Heteroepitaxial β-Ga ₂ O ₃ on Sapphire − Dependence on The Substrate Off-Axis Angle Rafique, Subrina; Han, Lu; Neal, Adam T. physica status solidi (a), Vol. 215, Issue 2 https://doi.org/10.1002/pssa.201700467	journal	November 2017
Three-dimensional anisotropic thermal conductivity tensor of single crystalline β-Ga ₂ O ₃ Jiang, Puqing; Qian, Xin; Li, Xiaobo Applied Physics Letters, Vol. 113, Issue 23 https://doi.org/10.1063/1.5054573	journal	December 2018
Nanoscale thermal transport Cahill, David G.; Ford, Wayne K.; Goodson, Kenneth E. Journal of Applied Physics, Vol. 93, Issue 2, p. 793-818 https://doi.org/10.1063/1.1524305	journal	January 2003

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Title: Thermal Conductivity of β-Phase Ga₂O₃ and (Al_xGa_1–x)₂O₃ Heteroepitaxial Thin Films