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Interfacial properties of YBa{sub 2}Cu{sub 3}O{sub 7-x} thin films on Al{sub 2}O{sub 3} substrates prepared by pulsed laser deposition

Journal Article · · Journal of Electronic Materials
DOI:https://doi.org/10.1007/BF02666732· OSTI ID:263166
;  [1]
  1. Yonsei Univ., Seoul (Korea, Republic of)
The interfaces of YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) superconducting thin films grown on (11 02) r-plane Al{sub 2}O{sub 3} by pulsed laser deposition have been investigated by a transmission electron microscopy and an Auger electron spectroscopy depth profile. We used the PrBa{sub 2}Cu{sub 3}O{sub 7-x} (PBCO) buffer layer to prevent the interdiffusion and compared the interfaces of YBCO/Al{sub 2}O{sub 3} and YBCO/PBCO/Al{sub 2}O{sub 3}. The intermediate layer in the YBCO film deposited on bare sapphire is visible between the film and the substrate but no boundary layer in the film grown on PBCO buffered sapphire was observed directly by the cross-section image of TEM. The thickness of the intermediate layer in the film on bare sapphire is about 30 nm. This result of TEM observation is consistent with that of AES depth profile. 9 refs., 4 figs.
Sponsoring Organization:
USDOE
OSTI ID:
263166
Journal Information:
Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 6 Vol. 25; ISSN JECMA5; ISSN 0361-5235
Country of Publication:
United States
Language:
English