Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 μm
- Opto-Electric Information Science, School of Materials Science and Engineering, Harbin Institute of Technology, 150001 Harbin (China)
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
The authors report the dependence of the quantum efficiency on beryllium concentration in the active region of type-II InAs/GaSb superlattice infrared detector with a cutoff wavelength around 21 μm. It is found that the quantum efficiency and responsivity show a clear delineation in comparison to the doping concentration. The quantum efficiency is further improved by gradually doping in the absorbing region. At 77 K, the 50% cutoff wavelength of the VLWIR detector is 18 μm, and the R{sub 0}A is kept at a stable value of 6 Ω cm{sup 2}. Different beryllium concentration leads to an increase of an average quantum efficiency in the 8–15 μm window from 35% to 55% with a π-region thickness of 3.0 μm, for U{sub bias} = −0.3 V, and no anti-reflection coating. As for a further result, the quantum efficiency reaches at a maximum value of 66% by gradually doping in the absorbing region with the peak detectivity of 3.33 × 10{sup 10 }cm Hz{sup 1/2}/W at 15 μm.
- OSTI ID:
- 22591462
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 12; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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