Growth and characterization of type-II superlattice photodiodes with cutoff wavelength of 12 μm on 4-in. wafer

Journal Article · Sun Sep 15 04:00:00 EDT 2019 · Optical and Quantum Electronics

DOI:https://doi.org/10.1007/S11082-019-1988-4· OSTI ID:22950149

Qi, Tong-Tong; Guo, Jie; Hao, Rui-Ting; Liu, Yu; Chang, Fa-Ran ^[1]; Jiang, Zhi; He, Xiao-Wu; Jiang, Dong-Wei; Wang, Guo-Wei; Xu, Ying-Qiang; Niu, Zhi-Chuan ^[2]

---

1. Yunnan Normal University, Yunnan Key Laboratory of Opto-electronic Information Technology (China)
2. Chinese Academy of Sciences, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors (China)

High performance InAs/GaSb superlattices for long-wavelength infrared detection were grown on a 4-in. GaSb wafer using molecular beam epitaxy. The influence of the growth temperature, V/III BEP ratio on the surface morphology and microstructure was researched. The good uniformity of the surface roughness and crystallization at four location along the radial direction on the wafer was obtained by balancing the inner and outer growth temperature. The performance deviation of the four photodiodes fabricated using the superlattices from center to edge on the wafer was below 20% which revealed the uniformity of the superlattice growth and the fabrication process. The 50% cutoff wavelength was about 12 μm. The peak responsivity was 2.54 A/W corresponding to a quantum efficiency of 35.1% at 77 K. The zero bias differential resistance-area product (R{sub 0}A) was 2.1 Ω cm{sup 2} due to the barrier structure design which restrains the diffusion dark current. The calculated Johnson noise limited detectivity was 5.75 × 10{sup 10} cm √Hz/W at 10 μm and 4.13 × 10{sup 10} cm √Hz/W at 14 μm.

• OSTI ID: 22950149
• Journal Information: Optical and Quantum Electronics, Journal Name: Optical and Quantum Electronics Journal Issue: 9 Vol. 51; ISSN OQELDI; ISSN 0306-8919
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALLIZATION
DARK CURRENT
DETECTION
FABRICATION
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NOISE
PERFORMANCE
PHOTODIODES
QUANTUM EFFICIENCY
ROUGHNESS
SUPERLATTICES
SURFACES
WAVELENGTHS