High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs{sub 1-x}Sb{sub x}/AlAs{sub 1−x}Sb{sub x} superlattices

Journal Article · Mon Oct 05 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4932518· OSTI ID:22482192

Haddadi, A.; Suo, X. V.; Adhikary, S.; Dianat, P.; Chevallier, R.; Hoang, A. M.

A high-performance short-wavelength infrared n-i-p photodiode based on InAs/InAs{sub 1−x}Sb{sub x}/AlAs{sub 1−x}Sb{sub x} type-II superlattices on GaSb substrate has been demonstrated. The device is designed to have a 50% cut-off wavelength of ∼1.8 μm at 300 K. The photodetector exhibited a room-temperature (300 K) peak responsivity of 0.47 A/W at 1.6 μm, corresponding to a quantum efficiency of 37% at zero bias under front-side illumination, without any anti-reflection coating. With an R × A of 285 Ω cm{sup 2} and a dark current density of 9.6 × 10{sup −5} A/cm{sup 2} under −50 mV applied bias at 300 K, the photodiode exhibited a specific detectivity of 6.45 × 10{sup 10 }cm Hz{sup 1/2}/W. At 200 K, the photodiode exhibited a dark current density of 1.3 × 10{sup −8} A/cm{sup 2} and a quantum efficiency of 36%, resulting in a detectivity of 5.66 × 10{sup 12 }cm Hz{sup 1/2}/W.

• OSTI ID: 22482192
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 107; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
CURRENT DENSITY
DESIGN
EQUIPMENT
GALLIUM ANTIMONIDES
ILLUMINANCE
INDIUM ARSENIDES
PERFORMANCE
PHOTODETECTORS
QUANTUM EFFICIENCY
REFLECTION
SUBSTRATES
SUPERLATTICES
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS