Electrical and Optical Properties of Unrelaxed InAs{sub 1 –x}Sb{sub x} Heteroepitaxial Structures
- Institute of Physics, National Academy of Sciences of Azerbaijan (Azerbaijan)
- Stony Brook University (United States)
- Institute of Solid State Physics, Russian Academy of Sciences (Russian Federation)
The electrical and galvanomagnetic properties of unrelaxed heteroepitaxial InAs{sub 1 –x}Sb{sub x} structures (x = 0.43 and 0.38) in a wide temperature range of 5–300 K and magnetic fields up to 8 T are studied. From the thermal-activation dependence of the electrical conductivity, the band gap of the composition InAs{sub 0.57}Sb{sub 0.43} is estimated as 120 meV. The electron concentration in InAs{sub 1 –x}Sb{sub x} (6 × 10{sup 16} cm{sup –3} for InAs{sub 0.62}Sb{sub 0.38} and 5 × 10{sup 16} cm{sup –3} for InAs{sub 0.57}Sb{sub 0.43}) determined from the Hall effect agrees well with the electron concentration calculated from the Shubnikov–de-Haas oscillations. We also carry out the spectral ellipsometric studies of unrelaxed heteroepitaxial structures of InAs{sub 1 –x}Sb{sub x} (x = 0.43 and 0.38) in the photon energy range of 1–6 eV. The spectral dependences of the imaginary and real parts of the dielectric constant are determined. The dispersion dependences of the refractive index and the extinction coefficient are calculated and presented.
- OSTI ID:
- 22944938
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 53; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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