Effect of polarization field on mean free path of phonons in indium nitride
- Department of Physics, K.I.I.T. University, Bhubaneswar-751024, Odisha (India)
The effect of built-in-polarization field on mean free path of acoustic phonons in bulk wurtzite indium nitride (InN) has been theoretically investigated. The elastic constant of the material gets modified due to the existence of polarization field. As a result velocity and Debye frequency of phonons get enhanced. The various scattering rates of phonons are suppressed by the effect of polarization field, which implies an enhanced combined relaxation time. Thus phonons travel freely for a longer distance between two successive scatterings. This would enhance the thermal transport properties of the material when built-in-polarization field taken into account. Hence by the application of electric field the transport properties of such materials can be controlled as and when desired.
- OSTI ID:
- 22591303
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1728; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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